Display device and method of manufacturing the same

ABSTRACT

A display device includes a substrate including a bending area, a display area. A plurality of first wires is disposed above the substrate. A second wire is disposed above the plurality of first wires. A third wire is disposed above the second wire. At least a portion of the second wire and at least a portion of the third wire are disposed in the bending area.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. § 119 to Korean PatentApplication No. 10-2016-0036973, filed on Mar. 28, 2016, in the KoreanIntellectual Property Office, the disclosure of which is incorporated byreference herein in its entirety.

TECHNICAL FIELD

Exemplary embodiments of the present invention relate to a displaydevice and a method of manufacturing the display device.

DISCUSSION OF THE RELATED ART

The use of display devices is widespread. Display devices may includeflat panel displays (FPDs) such as liquid crystal displays (LCDs),organic light-emitting diode (OLED) displays, plasma display panels(PDPs), etc.

Recently, a demand for flexible display panels has increased. Flexibledisplay panels may be bendable in various directions. To apply a touchfunction to the flexible display panel, a bendable touch film may beneeded.

However, cracks may occur in a wire disposed in a bending portion of theflexible display panel.

SUMMARY

According to an exemplary embodiment of the present invention, a displaydevice includes a substrate including a bending area and a display area.A plurality of first wires is disposed above the substrate. A secondwire is disposed above the plurality of first wires. A third wire isdisposed above the second wire. At least a portion of the second wireand at least a portion of the third wire are disposed in the bendingarea.

According to an exemplary embodiment of the present invention, a methodof manufacturing a display device includes providing a substrateincluding a bending area and a display area. A first wire is formedabove the substrate. A second wire is formed above the first wire, thesecond wire being at least partially disposed in the bending area. Alight emitting diode (LED) and an encapsulation unit are formed abovethe second wire. The encapsulating unit encapsulates the LED. A thirdwire is formed above the encapsulation unit.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the present invention willbecome more apparent by describing in detail exemplary embodimentsthereof in conjunction with the accompanying drawings, in which:

FIG. 1 is a plan view of a display device, according to an exemplaryembodiment of the present invention;

FIG. 2 is a cross-sectional view illustrating the display device of FIG.1, according to an exemplary embodiment of the present invention;

FIG. 3 is a cross-sectional view illustrating a portion of a displayarea of FIG. 1, according to an exemplary embodiment of the presentinvention;

FIG. 4 is a plan view illustrating a touch film included in a displaydevice, according to an exemplary embodiment of the present invention;

FIG. 5 is an enlarged view of a portion of a touch pattern included inthe touch film of FIG. 4, according to an exemplary embodiment of thepresent invention;

FIG. 6 is a plan view illustrating the bending area of a display device,according to an exemplary embodiment of the present invention;

FIG. 7 is a cross-sectional view illustrating a bending area of adisplay device, according to an exemplary embodiment of the presentinvention; and

FIG. 8 is a plan view illustrating of the bending area of FIG. 7,according to an exemplary embodiment of the present invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Exemplary embodiments of the present invention will now be describedmore fully with reference to the accompanying drawings. Like referencenumerals may refer to like elements throughout the specification. Asused herein, the term “and/or” may include any and all combinations ofone or more of the associated listed items.

The present invention is not limited to the exemplary embodimentsthereof described herein. It will be understood that various changes inform and details may be made to the disclosed exemplary embodimentswithout departing from the spirit and scope of the present invention.

As used herein, the singular forms “a,” “an” and “the” may be intendedto include the plural forms as well, unless the context clearlyindicates otherwise.

In the following description, when a layer is described as beingdisposed “on” or “above” another layer, the layer may be disposeddirectly on the other layer or intervening layers or elements may beinterposed therebetween.

In the drawings, the thickness or size of each layer may be exaggeratedfor convenience of description and clarity.

When an exemplary embodiment of the present invention may be implementedin more than one way, a process order may be performed differently froman already-described process order. For example, two consecutivelydescribed processes may be performed substantially at the same time orperformed in an order opposite to the described order.

FIG. 1 is a plan view of a display device 1000, according to anexemplary embodiment of the present invention.

The display device 1000, according to an exemplary embodiment of thepresent invention, may include a display area DA and a bending area B.

A substrate 100 of the display device 1000 may include variousmaterials. For example, the substrate 100 may include a transparentglass material including SiO². However, the materials included in thesubstrate 100 are not limited thereto. For example, the substrate 100may include a transparent plastic material. The transparent plasticmaterial may be an organic material selected from a group consisting ofpolyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI),polyethylene naphthalate (PEN), polyethylene terephthalate (PET),polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate(PC), cellulose triacetate (TAC), and cellulose acetate propionate(CAP), which are insulating organic materials.

In a bottom emission-type display device, in which an image is displayedthrough the substrate 100, the substrate 100 needs to include atransparent material. However, in a top emission-type display device, inwhich an image is displayed in a direction away from the substrate 100,the substrate 100 does not need to include a transparent material. Inthis case, the substrate 100 may include a metal. When the substrate 100includes a metal, the substrate 100 may include one or more metalsselected from a group consisting of steel, chromium, manganese, nickel,titanium, molybdenum, stainless steel (SUS), an invar alloy, an Inconelalloy, and a Kovar alloy, but it is not limited thereto.

The substrate 100 may include the display area DA, in which an imagerecognizable by a user is generated, and a non-display area NDA, whichis an edge area of the display area DA. An image might not be generatedin the non-display area NDA.

Various devices that generate light, such as an organic light-emittingdevice, a liquid crystal display device, etc., may be included in thedisplay area DA. A voltage line that supplies power to the variousdevices that generate light may be disposed in the non-display area NDA.

A pad unit PAD, that transfers an electrical signal to a power supplydevice or a signal generation device, may be disposed in the non-displayarea NDA.

The pad unit PAD may include a driver integrated circuit (IC) 410, a pad430 that connects the driver IC 410 with a pixel circuit, and fan outwires 420.

According to an embodiment, the fan out wires 420 may include a firstwire ML1, a second wire ML2 and/or a third wire ML3 (see FIGS. 6 and 8).A thin film transistor (TFT) (see FIG. 3) and the driver IC 410 areelectrically connected to each other via the fan out wires 420. In otherwords, the fan out wires 420 are electrically connected to the thin filmtransistor in the display area DA and the driver IC 410 in thenon-display area NDA.

Referring to the FIGS. 6 and 8, the first wire ML1 may be electricallyconnected to the TFT and at least one of the second wire ML2 and thethird wire ML3 may be electrically connected to the driver IC 410. Thus,the TFT and the driver IC 410 are electrically connected to each othervia the first wire ML1 and the at least one of the second wire ML2 andthe third wire ML3.

The driver IC 410 may include a data driver for supplying a data signalto pixels included in the display area DA. The pixels may beelectrically connected to the pixel circuit. In addition, the driver IC410 may include various hardware components for driving the pixelcircuit. The driver IC 410 may be mounted in the substrate 100 as a chipon glass (COG) type. The driver IC 410 may include a connection terminalthat is electrically connected to the pad 430. The pad 430 may beformed, for example, at a side of the substrate 100. A conductive ballmay be disposed between the pad 430 and the connection terminal toelectrically connect and/or to bond the pad 430 with the connectionterminal. The conductive ball may include an electrically conductiveadhesive material that may electrically connect the pad 430 with theconnection terminal and adhere the pad 430 to the connection terminal.The adhesive material of the conductive ball may include, for example,an anisotropic conductive film, a self organizing conductive film, etc.

The pad 430 may be formed over the substrate 100. The connectionterminal of the driver IC 410 is electrically connected with the pad430. The pad 430 may be electrically connected to the fan out wires 420.As shown in FIG. 1, the pad 430 may be disposed on a different layerfrom the fan out wires 420. However, the present invention is notlimited thereto. For example, the pad 430 may be disposed on the samelayer as the fan out wires 420. It is understood that the pad 430electrically connects the driver IC 410 with the fan out wires 420. Thepad 430 may include at least one selected from a group consisting ofmolybdenum (Mo), aluminum (Al), copper (Cu), silver (Ag), and titanium(Ti) in a single layer structure or in a multi-layer structure.

The fan out wires 420 may connect the pad 430 with the pixel circuit.The fan out wires 420 may include the same material as a gate electrodeG (see FIG. 3) or a drain electrode D (see FIG. 3). In addition the fanout wires 420 may be formed on the same layer as the gate electrode G ora drain electrode D.

The substrate 100 of the display device 1000, according to an exemplaryembodiment of the present invention, may be flexible and may elongatetwo-dimensionally.

The substrate 100 may include a material having a Poission's ratio ofabout 0.4 or more. The Poisson's ratio is a ratio of a length of amaterial that is stretched in a first direction and is contracted in asecond direction perpendicular to the first direction.

The material forming the substrate 100 may have a Poisson's ratio ofabout 0.4 or more. In other words, the substrate 100 may stretch welland may be flexible. Since the substrate 100 may be stretchable andflexible, the display device 1000 may be bent or folded.

As an alternative, the substrate 100 may include the bending area B. Thebending area B is bendable and/or foldable. For example, the displaydevice 1000 may be bent or folded at the bending area B.

In FIG. 1 the bending area B is shown to be disposed in the non-displayarea NDA. However, the present invention is not limited thereto, and thebending area B may be formed at any region of the substrate 100.

The bending area B may also be disposed in the display area DA.

One bending area B is shown in the display device 1000 of FIG. 1.However, the number of bending areas B that may be included in thedisplay device 1000 is not limited to one. For example, two or morebending areas B may be formed in the substrate 100 of the display device1000.

FIG. 2 is a cross-sectional view illustrating the display device 1000 ofFIG. 1, according to an exemplary embodiment of the present invention.

The display device 1000, according to an exemplary embodiment of thepresent invention, may include the substrate 100, a device unit 200, anencapsulation unit 300, a space layer 400, and a touch film 700.

The device unit 200 may be formed over the substrate 100. The deviceunit 200 may include various devices that generate light, such as anorganic light-emitting device and a liquid crystal display device and athin film transistor (TFT).

The display device 1000, according to an exemplary embodiment of thepresent invention, may include the encapsulation unit 300 to completelyseal the device unit 200, to protect the device unit 200 from externalmoisture or oxygen.

As an alternative, the encapsulation unit 300 may be disposed above thedevice unit 200, and both ends of the encapsulation unit 300 may contactthe substrate 100.

The encapsulation unit 300 may have a structure in which a plurality ofthin film layers are stacked by alternately stacking inorganic layersand organic layers.

The inorganic layers may substantially prevent penetration of oxygen ormoisture into the device unit 200. The organic layers may absorb stressfrom the inorganic layers to provide flexibility.

An inorganic layer may have a single layer structure or a multilayerstructure. The single or multilayer structure of the inorganic layer mayinclude a metal oxide or a metal nitride. In addition, the inorganiclayer may include one of SiNx, Al₂O₃, SiO₂, and TiO₂.

The organic layer may include a polymer. The organic layer may have asingle layer structure or a multilayer structure including, for example,one of PET, polyimide, PC, epoxy, polyethylene, and PAR. For example, inan exemplary embodiment of the present invention, the organic layer mayinclude PAR. Further, the organic layers may include a polymerizedmonomer composition including diacrylate-based monomer and/or atriacrylate-based monomer. The monomer composition may further include amonoacrylate-based monomer. The monomer composition may further includea photoinitiator, such as TPO, but the present invention is not limitedthereto.

The touch film 700 may be provided above the encapsulation layer 300,and the space layer 400 may be formed between the encapsulation layer300 and the touch film 700.

The space layer 400 may be an organic layer.

The device unit 200 may include a light-emitting device, such as anorganic light emitting diode (OLED). The light-emitting device mayinclude an electrode, as described below. A parasitic capacitance may begenerated between the electrode included in the device unit 200 and thetouch film 700 disposed above the device unit 200. As a result, sensingsensitivity of the display device 1000 may be low.

A parasitic capacitance generated between two layers is inverselyproportional to a distance between the two layers. To reduce theparasitic capacitance between the device unit 200 and the touch film700, a constant distance between the device unit 200 and the touch film700 may be required.

To maintain a constant distance between the device unit 200 and thetouch film 700, the space layer 400 may be provided. The space layer 400may have a varying thickness, as shown in FIG. 2. The space layer 400may be an organic layer.

The space layer 400 may have a single layer structure or a multilayerstructure, including an organic material. The space layer 400 may beformed through various deposition methods. For example, the space layer400 may include one or more materials such as polyacrylate resin, epoxyresin, phenolic resin, polyamide resin, polyimide resin, unsaturatedpolyester resins, polyphenylene ether resin, poly phenylenesulfideresin, and benzocyclobutene (BCB).

The touch film 700 may be disposed above the device unit 200. The touchfilm 700 may detect a touch if an object approaches or contacts thetouch film 700. Contact includes not only a case in which an externalobject, for example, a user's finger, directly contacts the touch film700, but also a case in which the object approaches the touch film 700or hovers over the touch film 700.

A structure of the touch film 700 will be described in detail later withthe accompanying drawings.

FIG. 3 is a cross-sectional view illustrating a portion of the displayarea DA of FIG. 1, according to an exemplary embodiment of the presentinvention.

As described above, various devices that generate light, for example, anorganic light-emitting device, a liquid crystal display device, etc.,and a TFT, may be provided in the display area DA.

The present invention is not limited to a case in which the display areaDA includes an OLED. However, for convenience of description, a casewhere the display area DA includes an OLED will be described below.

A buffer layer 110 may be formed over the substrate 100. The bufferlayer 110 may provide a planar surface to the substrate 100 and mayprevent impurities or moisture from penetrating through the substrate100. The buffer layer 110 may contain, for example, an organic materialsuch as silicon oxide, silicon nitride, silicon oxynitride, aluminumoxide, aluminum nitride, titanium oxide, or titanium nitride, or anorganic material such as polyimide, polyester, or acrylic, and may havea multilayer structure including a plurality of the above materials. Thebuffer layer 110 may be formed above (e.g., on) the display area DA, andmay extend in the non-display area NDA.

The TFT may include an active layer A, a gate electrode G, a sourceelectrode S, and a drain electrode D.

The TFT is illustrated as a top gate-type TFT in which the active layerA, the gate electrode G, the source electrode S, and the drain electrodeD are sequentially formed on the substrate 100 in the stated order.However, the present invention is not limited thereto. Various types ofTFTs, such as a bottom gate-type TFT, may be employed.

The active layer A may include polysilicon. The active layer A mayinclude a channel area that is not doped with impurities and a sourcearea and a drain area that are formed at both sides of the channel area,the source and drain areas being are doped with impurities. Theimpurities may differ depending on the type of TFT and may be, forexample, N type impurities or P type impurities.

After the active layer A is formed, a gate insulating layer 210 may beformed above the active layer A and above the entire surface of thesubstrate 100. The gate insulating layer 210 may have a single layerstructure or a multilayer structure including layers including aninorganic material such as silicon oxide or silicon nitride. The gateinsulating layer 210 may insulate the active layer A from the gateelectrode G above the active layer A. The gate insulating layer G maynot only extend in the display area DA, but also in a portion of thenon-display area NDA.

After the gate insulating layer 210 is formed on the substrate 100, thegate electrode G may be formed above the gate insulating layer 210. Thegate electrode G may be formed by photolithography and etching.

The gate electrode G may be formed above the gate insulating layer 210.A first wire ML1 (see FIG. 6) is disposed on a same layer with the gateelectrode G. In an embodiment, the gate electrode G may be connected toa first wire ML1 that applies an on/off signal to the TFT.

The gate electrode G may include a low resistance metal material. Thegate electrode G may have a single layer structure or a multilayerstructure. The gate electrode G may include one or more materials suchas, for example, aluminum (Al), platinum (Pt), palladium (Pd), silver(Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium(Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo),titanium (Ti), tungsten (W), and copper (Cu), by taking into accountadhesion with adjacent layers, surface planarization of stacked layers,processing, etc.

After the gate electrode G is formed, an interlayer insulating layer 230may be formed over the entire surface of the substrate 100. Theinterlayer insulating layer 230 may insulate the source electrode S andthe drain electrode D from each other. The interlayer insulating layer230 may not only extend in the display area DA, but also in a portion ofthe non-display area NDA.

The interlayer insulating layer 230 may include an inorganic material.The interlayer insulating layer 230 may include a metal oxide or a metalnitride. For example, the inorganic material may include silicon oxideSiO₂, silicon nitride SiNx, silicon oxynitride SiON, aluminum oxideAl₂O₃, titanium oxide TiO₂, tantalum oxide Ta₂O₅, hafnium oxide HfO₂, orzinc oxide ZrO₂.

The interlayer insulating layer 230 may have a multilayer structure or asingle layer structure. The interlayer insulating layer 230 may includean inorganic material such as silicon oxide SiOx and/or silicon nitrideSiNx. In an exemplary embodiment of the present invention, theinterlayer insulating layer 230 may have a dual structure of SiOx/SiNyor SiNx/SiOy.

The source electrode S and the drain electrode D of the TFT may bedisposed above the interlayer insulating layer 230. A second wire ML2(see FIG. 6) is disposed on a same layer with the source electrode S andthe drain electrode D.

The source electrode S and the drain electrode D may have a single layerstructure or a multilayer structure. Each of the source electrode S andthe drain electrode D may include one or more materials such as aluminum(Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold(Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium(Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), andcopper (Cu). The source electrode S and the drain electrode D may beformed to contact an area of the active layer A.

A via layer 250 may be formed above the entire surface of the substrate100 and may cover the source electrode S and the drain electrode D. Thevia layer 250 may compensate for a height difference caused by the TFT,and may planarize an upper surface of the display area DA. In addition,the via layer 250 may prevent a defect from occurring in an OLED due tovarying heights of elements disposed between the substrate 100 and thevia layer 250.

The via layer 250 may include an insulating material. The via layer 250may have a single layer structure or a multilayer structure. The vialayer 250 may including an inorganic material, an organic material, oran organic/inorganic compound, and may be formed through variousdeposition methods. In an exemplary embodiment of the present invention,the via layer 250 may include one or more materials such as polyacrylateresin, epoxy resin, phenolic resin, polyamide resin, polyimide resin,unsaturated polyester resins, poly phenylene ether resins, polyphenylenesulfide resin, and BCB.

The OLED may be formed above the via layer 250. The OLED may include afirst electrode 281, an intermediate layer 283 including an organicemission layer, and a second electrode 285. As shown in FIG. 3, thefirst electrode 281 may be electrically connected to the drain electrodeD.

The first electrode 281 and/or the second electrode 285 may include atransparent electrode or a reflective electrode. When the firstelectrode 281 and/or the second electrode 285 includes a transparentelectrode, the first electrode 281 and/or the second electrode 285 mayinclude indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide ZnO,or indium oxide In₂O₃. When the first electrode 281 and/or the secondelectrode 285 includes a reflective electrode, the first electrode 281and/or the second electrode 285 may include a reflective layer includingAg, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof, and atransparent layer including ITO, IZO, ZnO, or In₂O₃. In an exemplaryembodiment of the present invention, the pixel electrode 281 or thesecond electrode 285 may have an ITO/Ag/ITO structure.

The first electrode 281 may be formed over the via layer 250 and may beelectrically connected to the TFT through a contact hole formed in thevia layer 250. The first electrode 281 may be, for example, a reflectiveelectrode. For example, the first electrode 281 may include a reflectivelayer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and a compoundthereof, and a transparent or translucent electrode layer over thereflective layer. The transparent or translucent electrode layer mayinclude one or more materials selected from a group consisting of ITO,IZO, zinc oxide (ZnO), indium oxide In₂O₃, indium gallium oxide (IGO),and aluminum zinc oxide (AZO).

The second electrode 285, disposed to face the first electrode 281, maybe a transparent or translucent electrode. The second electrode 285 mayinclude a metal thin layer having a low work function and including Li,Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, and/or a compound thereof. An auxiliaryelectrode layer or a bus electrode, including a transparent electrodematerial such as ITO, IZO, ZnO, or In₂O₃, may be further formed over themetal thin layer. Accordingly, the second electrode 285 may transmitlight emitted from the organic emission layer included in theintermediate layer 283. In other words, the light emitted from theorganic emission layer may be reflected directly or by the firstelectrode 281 including the reflective electrode and may be dischargedtoward the second electrode 285.

However, the display area DA is not limited to a top emission type. Thedisplay device 1000 may be a bottom emission type in which, in thedisplay area DA, the light emitted from the organic emission layer isdischarged toward the substrate 100. In this case, the first electrode281 may include a transparent or translucent electrode, and the secondelectrode 285 may include a reflective electrode. The display area DA ofthe display device 1000 may also be a dual emission type display area,in which light is emitted from both the top and bottom sides of thedisplay area DA.

A pixel defining layer 270, defining a pixel area and a non-pixel area,may be formed on the substrate 100. The pixel defining layer 270 mayinclude an opening 270 a, exposing the first electrode 281. The pixeldefining layer 270 may be formed to cover the entire surface of thesubstrate 100.

The pixel defining layer 270 may include one or more organic insulatingmaterials selected from a group consisting of polyimide, polyamide,acrylic resin, benzocyclobutene, and phenol resin. The pixel defininglayer 270 may be formed through a method such as spin coating.

FIG. 4 is a plan view illustrating the touch film 700 included in thedisplay device 1000, according to an exemplary embodiment of the presentinvention. FIG. 5 is an enlarged view of a portion of a touch pattern720 included in the touch film 700 of FIG. 4, according to an exemplaryembodiment of the present invention.

The touch film 700 may include a base film and a plurality of touchpatterns 720 formed over the base film.

As shown in FIG. 4, the touch patterns 720 may include a plurality offirst touch cells 720 a and a plurality of second touch cells 720 b.

The first touch cells 720 a and the second touch cells 720 b may includea transparent conductive material such as ITO.

Each of the plurality of touch patterns 720 may be electricallyconnected to touch wires 730. The plurality of touch patterns 720 may beconnected to the pad unit PAD and an external driving circuit throughthe touch wires 730.

The touch wires 730 may be disposed in the display area DA, (see FIG. 1)on which an image is displayed, and the non-display area NDA, (seeFIG. 1) that is an edge portion of the display area DA. The touch wires730 may include one or more materials. For example, the touch wires 730may include a low resistance metal material such as molybdenum (Mo),silver (Ag), titanium (Ti), copper (Cu), aluminum (Al),molybdenum/aluminum/molybdenum Mo/Al/Mo, etc., in addition to thetransparent conductive material used to form the touch patterns 720.

The touch film 700, according to an exemplary embodiment of the presentinvention, may be a capacitance type touch panel. In a capacitance typetouch panel, when an object such as a user's finger or a stylus pencontacts the touch film 700, the object may cause a capacitance change.The capacitance change may be transmitted to a driving circuit of thedisplay device 1000 through the touch wires 730 and the pad unit PAD.The capacitance change is related to the location of the touch film 700contacted by the object. Accordingly, the capacitance change originatesfrom the location of the touch patterns 720 (e.g., the particular firsttouch cells 720 a and the second touch cells 720 b) touched by theobject.

Then, the capacitance change may be converted into an electrical signalby an X and Y input processing circuit. Thus, the contact location(e.g., the particular first touch cells 720 a and the second touch cells720 b) touched by the object may be identified.

Referring to FIG. 5, the touch film 700 may include the plurality offirst touch cells 720 a, formed to be connected in a row direction foreach row of the touch patterns 720, and a plurality of first connectionlines 720 a 1, that connect the first touch cells 720 a in the rowdirection.

The touch film 700 may also include the plurality of second touch cells720 b, formed to be connected in a column direction for each column ofthe touch patterns 720, and a plurality of second connection lines 720 b1, that connect the second touch cells 720 b in the column direction.

Although only a portion of the film 700 is illustrated in FIG. 5 forconvenience of description, it is understood that the touch film 700 mayinclude a plurality of touch patterns 720 repeatedly arranged in the rowand column directions, as shown in FIG. 4.

The first touch cells 720 a and the second touch cells 720 b may bealternately arranged to not overlap each other. The first connectionlines 720 a 1 and the second connection lines 720 b 1 may cross eachother.

In addition, an insulating layer for achieving stability of the touchpatterns 720 may be disposed between the first connection lines 720 a 1and the second connection lines 720 b 1.

Alternatively, the first touch cells 720 a and the second touch cells720 b may be integrally formed with the first connection lines 720 a 1and the second connection lines 720 b 1, respectively, by using atransparent conductive material such as ITO, or may be separately formedfrom and electrically connected to the first connection lines 720 a 1and the second connection lines 720 b 1.

For example, the second touch cells 720 b may be patterned in a columndirection and be integrally formed with the second connection lines 720b 1. In this case, the first touch cells 720 a may be patterned to beindependent patterns between the second touch cells 720 b, and may beconnected via the first connection lines 720 a 1 above or below thefirst touch cells 720 a in a row direction.

The first connection lines 720 a 1 may directly contact and may beelectrically connected to the first touch cells 720 a above or below thefirst touch cells 720 a, or may be electrically connected to the firsttouch cells 720 a via a contact hole, etc.

The first connection lines 720 a 1 may include a transparent conductivematerial such as ITO, or an opaque low resistance metal material. Thewidths of the transparent conductive material and/or the opaque lowresistance metal material may be adjusted to prevent patterns from beingviewed by a user of the display device 1000.

FIG. 6 is a plan view illustrating of the bending area B of a displaydevice, according to an exemplary embodiment of the present invention.The same reference numerals denote the same elements between FIG. 6 andFIGS. 1 through 5. Duplicative descriptions of elements that havealready been described may be omitted for brevity.

The display device of FIG. 6 may include the substrate 100 including thebending area B, the first wire ML1, the second wire ML2, and a thirdwire ML3 disposed on the substrate 100.

FIG. 6 is a plan view illustrating the bending area B of FIG. 1,according to an exemplary embodiment of the present invention. Thesecond wire ML2 and the third wire ML3 may be formed on the substrate100 (see FIG. 1) in the bending area B. It is understood that in FIG. 6,each second wire ML2 and each third wire ML3 are connected to differentfirst wires ML1.

Alternatively, at least a portion of the first wire ML1 may be disposedin the bending area B. The second wire ML2 and the third wire ML3 may beformed above the first wire ML1.

Alternatively, the first wire ML1 may be formed over the substrate 100in an area adjacent to the bending area B, but not in the bending areaB.

The area adjacent to the bending area B means an area beside or adjacentto the bending area B, among areas of the substrate 100, other than thebending area B. The area adjacent to the bending area B may include anyarea of the substrate 100, except for the bending area B.

The first wire ML1, the second wire ML2, and the third wire ML3 may besequentially formed in the area of the substrate 100 other than thebending area B. According to an exemplary embodiment of the presentinvention, the first wire ML1 may not be formed in the bending area B,and at least a portion of the second wire ML2 and at least a portion ofthe third wire ML3 may be formed in the bending area B.

In the display device 1000, according to an exemplary embodiment of thepresent invention, no cracks may occur in the first wire ML1, even ifthe bending area B is repeatedly folded and unfolded, since the firstwire ML1 is not formed on the bending area B. However, the second wireML2 and the third wire ML3 may be formed in the bending area B.

The first wire ML1 and the second wire ML2 may respectively be disposedon the same layer with the gate electrode G (see FIG. 3) and thesource/drain electrode S and D (see FIG. 3). The third wire ML3 and thetouch wires 730 (see FIG. 4) may include a same material. However,exemplary embodiments of the present invention are not limited thereto.

Alternatively, the TFT (FIG. 3) may further include an upper drainelectrode in addition to the drain electrode D. The upper drainelectrode may be disposed over the drain electrode D. The second wireML2 and the third wire ML2 may be disposed on a same layer with thedrain electrode D and the upper drain electrode, respectively.

Alternatively, the third wire ML3 may be disposed on a same layer with afirst electrode.

The first wire ML1 may include one or more materials such as aluminum(Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold(Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium(Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), andcopper (Cu), which are metals having low flexibility.

The bending area B of the substrate 100 of the display device 1000,according to an exemplary embodiment of the present invention, may berepeatedly folded and unfolded, or bent and straightened. During theprocess of folding and unfolding, or bending and straightening thebending area B of the substrate 100, when the first wire ML1, is formedin an area of the substrate 100 other than the bending area B, no cracksoccur may occur in the first wire ML1 since the first wire ML1 is notbeing folded and unfolded, or bent and straightened in the bending areaB.

The second wire ML2 and the third wire ML3 may be disposed at differentheights with respect to the substrate 100. For example, the third wireML3 may be disposed above the second wire ML2.

The second wire ML2 and the third wire ML3 may be disposed at differentheights from the substrate 100, and thus a short circuit may not occurtherebetween, although horizontal spaces (e.g., a horizontal distancebetween the second wire ML2 and the third wire ML3, the horizontaldistance being measured in a direction parallel to the surface of thesubstrate 100 that faces the second and third wire ML2 and ML3) betweenthe second and third wires ML2 and ML3 are not constant. For example,the second wire ML2 and the third wire ML3 may be formed withoutmaintaining a constant horizontal space therebetween. Thus, since thesecond wire ML2 may be disposed on a different layer from the third wireML3, the second wire ML2 and the third wire ML3 need not maintain aconstant horizontal distance therebetween to avoid short circuiting onthe same layer. Thus, a dead space generated by the second wire ML2 andthe third wire ML3 may be reduced.

The interlayer insulating layer 230 (see FIG. 7) may be formed betweenthe first wire ML1 and the second wire ML2. However, this arrangement ismerely an example. Other insulating layers may also be formed betweenthe first wire ML1 and the second wire ML2.

The encapsulation unit 300 (see FIG. 7) may be formed between the secondwire ML2 and the third wire ML3. For example, the third wire ML3 may beformed above the encapsulation unit 300. However, this is merely anexample. Other insulating layers including the encapsulation unit 300may also be formed between the second wire ML2 and the third wire ML3.

As shown in FIG. 6, a plurality of the first wires ML1, a plurality ofthe second wires ML2 and a plurality of third wires ML3 may be providedon the substrate 100. The second wires ML2 and the third wires ML3 maybe arranged side by side, and may be alternately formed. One of theplurality of first wires ML1 and the second wire ML2 are connected toeach other and other of the plurality of first wired and the third wireare connected to each other.

The plurality of second wires ML2 and a plurality of third wires ML3 maybe disposed at different heights from the substrate 100. For example,the plurality of third wires ML3 may be disposed to have a greaterperpendicular distance from the substrate 100 than the plurality ofsecond wires ML2.

Thus, even if the second wires ML2 and the third wires ML3, that havedifferent heights from the substrate 100, are alternately disposedwithout maintaining constant horizontal spaces therebetween, no shortcircuit occurs between the second wires ML2 and the third wires ML3. Forexample, the second wires ML2 and the third wires ML3 may be formedwithout maintaining a constant horizontal space therebetween. Since thesecond wires ML2 may be disposed on a different layer from the thirdwires ML3, the second wires ML2 and the third wires ML3 need notmaintain a constant horizontal distance therebetween to avoid shortcircuiting on the same layer. Thus, no dead space is generated from thesecond wires ML2 and the third wires ML3.

A first contact hole CNT1 may be formed in the one of the plurality offirst wires ML1, the second wire ML2 is connected to the one of theplurality of first wires ML1 through the first contact hole CNT1. Asecond contact hole CNT2 may be formed in the other of the plurality offirst wires ML1, the third wire ML3 is connected to the other of theplurality of first wires ML2 through the second contact hole CNT2.

The second wire ML2 and the third wire ML3 may include same material.According to an embodiment, the second wire ML2 and the third wire ML3may include a Ti/Al/Ti material, which has a low probability of crackingwhen bent. In other words, a Ti/Al/Ti material has a high resistivity tocracking from bending. When the second wire ML2 and the third wire ML3include the Ti/Al/Ti material, although at least a portion of the secondwire ML2 and at least a portion of the third wire ML3 is disposed in thebending area B and is repeatedly bent, the probability that the secondand third wires ML2 and ML3 will crack is low.

However, the present invention is not limited thereto. For example, thesecond wire ML2 and the third wire ML3 may include a material that isresistant to cracking from bending and/or folding other than theTi/Al/Ti material, and may include a combination of different materialsthat are resistant to cracking from bending and/or folding. According toan exemplary embodiment of the present invention, the Ti/Al/Ti materialmay include a structure including a layer including aluminum (Al)disposed between two other layers, each of the two other layersincluding titanium (Ti).

FIG. 7 is a cross-sectional view illustrating the bending area B of adisplay device 1000, according to an exemplary embodiment of the presentinvention. FIG. 8 is a plan view illustrating the bending area B of FIG.7, according to an exemplary embodiment of the present invention. Thesame reference numerals denote the same elements between FIGS. 7 and 8and FIGS. 1 through 6. Duplicative descriptions of elements that havealready been described may be omitted for brevity.

The display device 1000, according to an exemplary embodiment of thepresent invention, may include the substrate 100 including the bendingarea B, the first wire ML1, the second wire ML2, and the third wire ML3disposed on the substrate 100.

Referring to FIGS. 7 and 8, the first wire ML1 may include a wire ML1-1(e.g., a bottom wire) and a wire ML1-2 (e.g., a top wire). For example,the top wire ML1-2 may be formed above the bottom wire ML1-1. The secondwire ML2 may be formed above the top wire ML1-2.

A first interlayer insulating layer 220 may be formed between the bottomwire ML1-1 and the top wire ML1-2 to insulate the wires ML1-1 and ML1-2from each other.

Alternatively, the interlayer insulating layer 230 may be formed betweenthe bottom wire ML1-1 and the top wire ML1-2 to insulate the wires ML1-1and ML1-2 from each other.

The encapsulation unit 300 may be formed between the second wire ML2 andthe third wire ML3. For example, the third wire ML3 may be formed abovethe encapsulation unit 300. However, this is merely an example. Otherinsulating layers, including the encapsulation unit 300, may also beformed between the second wire ML2 and the third wire ML3.

FIG. 7 is a cross-sectional view illustrating the bending area B of FIG.1, according to an exemplary embodiment of the present invention. Thesecond wire ML2 and the third wire ML3 may be formed over the substrate100 in the bending area B.

At least a portion of the bottom wire ML1-1 and at least a portion thetop wire ML1-2 may be disposed in the bending area B. The second wireML2 and the third wire ML3 may be sequentially formed above the bottomwire ML1-1 and the top wire ML1-2, the wires ML1-1 and ML1-2 having atleast a portion thereof disposed in the bending area B.

Alternatively, the bottom wire ML1-1 and the top wire ML1-2 may beformed over the substrate 100 in an area adjacent to the bending area B,other than in the bending area B. The second wire ML2 and the third wireML3 may be formed in the bending area B.

For example, the bottom wire ML1-1 and the top wire ML1-2 may be formedfirst, and then the second wire ML2 and the third wire ML3 may be formedin the area adjacent the bending area B. In this case, the bottom wireML1-1 and the top wire ML1-2 may not be formed in the bending area B,and the second wire ML2 and the third wire ML3 may be formed in thebending area B.

In the display device 1000, according to an exemplary embodiment of thepresent invention, no cracks may occur in the bottom wire ML1-1 and thetop wire ML1-2 since the bottom wire ML1-1 and the top wire ML1-2 arenot formed in the bending area B. The second wire ML2 and the third wireML3 may be formed in the bending area B. In addition, since the secondwire ML2 and the third wire ML3 may be formed of one or more materialshaving a flexible or bend-resistant structure, the second wire ML2 andthe third wire ML3 may resist repetitive bending and straightening, orfolding and unfolding experienced in the bending area B.

One of the bottom wire ML1-1 and the top wire ML1-2 may be disposed on asame layer with the gate electrode G (see FIG. 3).

The second wire ML2 may be disposed on a same layer with the sourceelectrode S and the drain electrode D (see FIG. 4) and the third wireML3 and the touch wires 730 (see FIG. 4) may include a same material,but are not limited thereto. The second wire ML2 and the third wire ML3may be other wires provided over the substrate 100.

According to an exemplary embodiment of the present invention, the thirdwire ML3 may be formed on the same layer as a first electrode.

The bottom wire ML1-1, the top wire ML1-2, the second wire ML2, and thethird wire ML3, respectively, may be disposed at increasing heights fromthe substrate 100 in a direction perpendicular to the substrate 100. Forexample, the top wire ML1-2 may be formed above the bottom wire ML1-1,the second wire ML2 may be formed above the top wire ML1-2, and thethird wire ML3 may be formed above the second wire ML2.

At least a portion of the second wire ML2 and at least a portion of thethird wire ML3, which are formed in the bending area B, may be disposedat different heights from the substrate 100. Thus, a short circuit maynot occur therebetween, although a horizontal distance between thesecond wire ML2 and the third wire ML3 may not be constantly maintainedover the substrate 100. For example, the second wires ML2 and the thirdwires ML3 may be formed without maintaining a constant horizontal spacetherebetween. Since the second wire ML2 may be disposed on a differentlayer from the third wire ML3, the second wire ML2 and the third wireML3 need not maintain a constant horizontal distance therebetween toavoid short circuiting on the same layer. Since the second wire ML2 andthe third wire ML3 may be formed without maintaining a constanthorizontal distance therebetween, a dead space may be reduced.

The bottom wire ML1-1 and the top wire ML1-2 may not be formed in thebending area B. The bottom wire ML1-1 and the top wire ML1-2, which aredisposed in the area adjacent to the bending area B, may be physicallyand electrically connected to the second wire ML2 and the third wireML3, respectively.

As shown in FIG. 7, the first contact hole CNT1 and the second contacthole CNT2 may be formed in the area adjacent to the bending area B. Itis understood that more than one first contact hole CNT1 may be formedon the bottom wire ML1-1, and that more than one second contact holeCNT2 may be formed on the top wire ML1-2.

The first contact hole CNT1 may expose the bottom wire ML1-1. The secondcontact hole CNT2 may expose the top wire ML1-2.

As shown in FIG. 7, the second wire ML2 may be connected to the bottomwire ML1-1 through the first contact hole CNT1, and the third wire ML3may be connected to the top wire ML1-2 through the second contact holeCNT2. However, this is merely an example

The second wire ML2 may be connected to the top wire ML1-2, and thethird wire ML3 may be connected to the bottom wire ML1-1.

As shown in FIG. 8, two or more second wires ML2 and two or more thirdwires ML3 may be provided on the substrate 100.

As shown in FIGS. 6 and 8, the second wires ML2 and the third wires ML3may be arranged side by side and may be alternately formed.

The plurality of second wires ML2 and third wires ML3 may be disposed atdifferent heights from the substrate 100, as described above. Forexample, the plurality of third wires ML3 may be disposed to have agreater distance in a direction perpendicular to a plane or surface ofthe substrate 100, the plane or surface of the substrate 100 facing thethird wires ML3 and the second wires ML2, than the plurality of secondwires ML2. Accordingly, the plurality of third wires ML3 may be disposedfurther apart from the substrate 100 than the plurality of second wiresML2.

Thus, even if the second wires ML2 and the third wires ML3 arealternately disposed without maintaining constant horizontal spacestherebetween, no short occurs since the second wires ML2 and the thirdwires ML3 are disposed at different heights from the substrate 100. Forexample, the second wires ML2 and the third wires ML3 may be formedwithout maintaining a constant horizontal space therebetween. Since thesecond wire ML2 may be disposed on a different layer from the third wireML3, the second wire ML2 and the third wire ML3 need not maintain aconstant horizontal distance therebetween to avoid short circuiting onthe same layer. Accordingly, no dead space is generated by the secondwires ML2 and the third wires ML3.

The second wire ML2 and the third wire ML3 may include a Ti/Al/Timaterial having a low probability of cracking due to bending and/orfolding.

For example, when the wire ML2 and the third wire ML3 may include theTi/Al/Ti material, and at least a portion of the wire ML2 and at least aportion of the third wire ML3 is disposed in the bending area B. Sincethe Ti/Al/Ti material included in the second wire ML2 and the third wireML3 is resistant to cracking from bending and/or folding, the portion ofthe second wire ML2 and the third wire ML3 that is disposed and bent inthe bending area B may resist cracking from repetitive bending and/orfolding of the bending area B. However, the present invention is notlimited thereto. For example, the second wire ML2 and the third wire ML3may include a material that is resistant to cracking from bending and/orfolding other than the Ti/Al/Ti material, and may include a combinationof different materials that are resistant to cracking from bendingand/or folding.

A method of manufacturing the display device 1000, according to anexemplary embodiment of the present invention, will now be describedwith reference to FIGS. 1, 2, 3, and 6. Duplicative descriptions ofelements that have already been described may be omitted for brevity.

The substrate 100 may be formed or provided. The substrate 100 mayinclude the bending area B and the display area DA. The substrate 100may be flexible and may elongate two-dimensionally.

The display device 1000 may be temporarily bent or folded at the bendingarea B. The location of the bending area B on the substrate 100 mayvary, and the number of bending areas B on the substrate 100 is notlimited to one. For example, the substrate 100 may include a pluralityof bending areas B. The bending area B may also be positioned in thedisplay area DA. For example, the bending area B may be formed in anyarea of the substrate 100.

The first wire ML1 may be formed on the substrate 100.

The first wire ML1 may be a gate wire. A part of the first wire ML1 mayform the gate electrode G in the display area DA.

At least a part of the first wire ML1 may be disposed in the bendingarea B.

For example, the first wire ML1 may be formed on the substrate 100 in anarea other than the bending area B.

The interlayer insulating layer 230 may be formed above the first wireML1.

The first contact hole CNT1 may be formed by removing a part of theinterlayer insulating layer 230 adjacent to the bending area B throughan etching process. For example, the etching process may include wetetching, dry etching, or another kind of etching which may combine wetetching and dry etching.

The second wire ML2 may be formed above the interlayer insulating layer230. The second wire ML2 may be physically and/or electrically connectedto the first wire ML1 via the first contact hole CNT1.

In addition, the second wire ML2 may be formed over all areas of thesubstrate 100. For example, the second wire ML2 may be formed in thebending area B.

The second wire ML2 may be a data wire. A part of the second wire ML2may form the source electrode S and the drain electrode D in the displayarea DA.

An emission device and the encapsulation unit 300, which encapsulatesthe emission device, may be formed above the second wire ML2. Theemission device may be an OLED, but it is not limited thereto. Accordingto an exemplary embodiment of the present invention, whether theemission device is an OLED, a liquid crystal display (LCD) device, orthe like, the emission device may emit light.

The encapsulation unit 300 may be formed as a thin, encapsulating typeof film. The encapsulation unit 300 may include a plurality of thinorganic layers and a plurality of thin inorganic layers alternatelystacked on each other.

The second contact hole CNT2 may be formed by removing a part of aninsulating layer, for example, by removing a part of the interlayerinsulating layer 230 and the encapsulation unit 300, which are adjacentto the bending area B. The removal of the interlayer insulating layer230 and the encapsulation unit 300 may be done through an etchingprocess. The etching process may include wet etching, dry etching, oranother kind of etching which combines combination wet etching and dryetching.

The touch film 700 may be formed above the encapsulation unit 300. Thetouch film 700 may include the plurality of touch patterns 720. Thetouch patterns 720 may be electrically connected to the touch wires 730.The touch patterns 720 may be connected to the pad unit PAD and to anexternal driving circuit through the touch wires 730.

The third wire ML3 may be formed above the encapsulation unit 300, andthe third wire ML3 and the touch wire 730 may include a same material.

The third wire ML3 may be physically and/or electrically connected tothe first wire ML1 through the second contact hole CNT2.

The third wire ML3 may be formed over all areas of the substrate 100.For example, the third wire ML3 may be formed in the bending area B.

A method of manufacturing the display device 1000, according to anexemplary embodiment of the present invention, will now be describedwith reference to FIGS. 1, 2, 3, and 7.

The substrate 100, including the bending area B and the display area DA,may be prepared (e.g., formed or provided).

The bottom wire ML1-1 may be formed above the substrate 100. The firstinterlayer insulating layer 220 may be formed above the bottom wireML1-1.

At least a portion of the bottom wire ML1-1 may be disposed in thebending area B.

The bottom wire ML1-1 may be formed above the substrate 100, in an areaother than the bending area B.

The top wire ML1-2 may be formed above the first interlayer insulatinglayer 220. The interlayer insulating layer 230 may be formed above thewire ML1-2.

At least a portion of the top wire ML1-2 may be disposed in the bendingarea B.

The top wire ML1-2 may be formed above the substrate 100 in an areaother than the bending area B.

The first contact hole CNT1 may be formed by removing a portion of thefirst insulating layer 220 and the interlayer insulating layer 230adjacent to the bending area B through an etching process.

The second wire ML2 may be formed above the interlayer insulating layer230. The second wire ML2 may be physically and/or electrically connectedto the first wire ML1 via the first contact hole CNT1.

At least a portion of the second wire ML2 may be formed in the bendingarea B.

An emission device, and the encapsulation unit 300 that encapsulates theemission device, may be formed above the second wire ML2. The secondcontact hole CNT2 may be formed by removing a portion of an insulatinglayer, including the interlayer insulating layer 230 and theencapsulation unit 300, that are adjacent to the bending area B.

The touch film 700 may be formed above the encapsulation unit 300. Thetouch film 700 formed above the encapsulation unit 300 may include thetouch wires 730.

The third wire ML3 may be physically and/or electrically connected tothe first wire ML1 through the second contact hole CNT2.

The third wire ML3 may be formed over all areas of the substrate 100.For example, the third wire ML3 may also be formed in the bending areaB.

As described above, even if a wire space (e.g., a horizontal wirespacing) is reduced in a bending area B of the substrate 100, shortcircuiting of the wires may be prevented from occurring since the wiresmay be disposed on different layers.

As a result, a dead space of the bending area B may be reduced.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be apparent tothose of ordinary skill in the art that various changes in form anddetail may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

What is claimed is:
 1. A display device, comprising: a substratecomprising a bending area and a display area; a plurality of first wiresdisposed above the substrate; a second wire disposed above the pluralityof first wires; and a third wire disposed above the second wire, whereinat least a portion of the second wire and at least a portion of thethird wire are disposed in the bending area.
 2. The display device ofclaim 1, further comprising a plurality of second wires and a pluralityof third wires, wherein the plurality of second wires and the pluralityof third wires are alternately arranged with respect to each other inthe bending area.
 3. The display device of claim 1, wherein, in thebending area, the second wire and the third wire are disposed ondifferent layers.
 4. The display device of claim 3, wherein, in thebending area, a first distance from the substrate to the third wire isgreater than a second distance from the substrate to the second wire,wherein the first distance is measured perpendicularly with respect to afirst surface of the substrate, and the second distance is measuredperpendicularly with respect to the first surface of the substrate. 5.The display device of claim 1, further comprising a thin film transistor(TFT) disposed in the display area, wherein the TFT comprises an activelayer, a gate electrode, a source electrode and a drain electrode, andwherein the second wire is disposed on a same layer with the sourceelectrode and the drain electrode.
 6. The display device of claim 1,wherein a touch film is disposed on the substrate, the touch filmcomprising a touch pattern and a touch wire electrically connected tothe touch pattern, and wherein the third wire and the touch wirecomprise a same material.
 7. The display device of claim 1, furthercomprising a thin film transistor (TFT) disposed in the display area,wherein the TFT comprises an active layer, a gate electrode, a sourceelectrode and a drain electrode, and wherein the one of the plurality offirst wires is disposed on a same layer with the gate electrode.
 8. Thedisplay device of claim 7, wherein a first contact hole and a secondcontact hole are disposed in an area of the substrate adjacent to thebending area, the first contact hole exposing a portion of the one ofthe plurality of first wires, and the second contact hole exposing aportion of the other of the plurality of first wires, wherein the one ofthe plurality of first wires and the second wire are connected to eachother through the first contact hole, and wherein the other of theplurality of first wires and the third wire are connected to each otherthrough the second contact hole.
 9. The display device of claim 1,wherein the one of the plurality of first wires comprises a bottom wiredisposed over the substrate and a top wire disposed above the bottomwire in an area adjacent to the bending area.
 10. The display device ofclaim 9, further comprising a thin film transistor (TFT) disposed in thedisplay area, wherein the TFT comprises an active layer, a gateelectrode, a source electrode and a drain electrode, and wherein one ofthe bottom wire and the top wire is disposed on a same layer with thegate electrode.
 11. The display device of claim 10, wherein a firstcontact hole, through which a portion of the bottom wire is exposed, anda second contact hole, through which a portion of the top wire isexposed, are disposed in the area of the substrate adjacent to thebending area, wherein the bottom wire and the second wire are connectedto each other through the first contact hole, and wherein the top wireand the third wire are connected to each other through the secondcontact hole.
 12. The display device of claim 1, further comprising alight emitting diode (LED) disposed between the second wire and thethird wire, wherein the LED emits light.
 13. The display device of claim12, further comprising an encapsulation unit disposed between the secondwire and the third wire, wherein the encapsulation unit encapsulates theLED.
 14. A display device, comprising: a substrate comprising a displayarea and a non display area; a thin film transistor (TFT) disposed inthe display area; an integrated circuit (IC) disposed in the non displayarea; a first wire disposed above the substrate, the first wireelectrically connected to the TFT; a second wire disposed above thefirst wire; and a third wire disposed above the second wire, wherein thefirst wire is electrically connected to at least one of the second wireand the third wire, and wherein the at least one of the second wire andthe third wire is electrically connected to the IC.
 15. The displaydevice of claim 14, wherein the first wire comprises a bottom wiredisposed over the substrate and a top wire disposed above the bottomwire, wherein one of the bottom wire and the top wire is connected tothe second wire, and the other of the bottom wire and the top wire isconnected to the third wire, and wherein the second wire and the thirdwire comprise a same material.